A Self-Consistent Model for Thermal Oxidation of Silicon at Low Oxide Thickness

Table 4

Oxide growth rate calculated for distinct oxide thickness intervals for Blanc’s data set A8 (Figure 3). All rate values are calculated at  nm.

Interval /nm	Growth rate /(pm/s)
6.65–9.25	6.671733
6.65–17.15	6.674348
6.65–28.8	6.665359
6.65–38.8	6.665278
6.65–48.8	6.665705
6.65–62.23	6.665520
Average