Resonance Raman Scattering in TlGaSe₂ Crystals

Table 1

Emission lines of resonance Raman scattering in TlGaSe₂ crystals measured at 10 K and excited by 514.5 nm Ar⁺ laser line in geometry and possible phonons combinations (symmetry, modes, and frequencies) responsible for resonance scattering.

Line,	Wavenumber; shift, cm^−1	Assignment
1	120	(LO), 121;
2	134	(LO), 67 + (LO), 67;
3	140	(LO), 140;
4	151	(LO), 67 + (LO), 84;
5	163	(LO), 73 + (LO), 91;
6	187	(LO), 106 + (LO), 84; (LO), 114 + (LO), 73;
7	238	(LO), 114 + (LO), 121;
8	313	(LO), 240 + (LO), 73;
9	436	(LO), 106 + (LO), 224;
10	480	(LO), 240 + (LO), 240;
12	590	(LO), 260 + (LO), 91 + (LO), 240;
13	634	(LO), 260 + (LO), 260 + (LO), 114;
14	732	(LO), 240 + (LO), 224 + (LO), 268;
15	960	(LO), 240 + (LO), 240 + (LO), 240 + (LO), 240;
16	999	(LO), 240 + (LO), 240 + (LO), 260 + (LO), 260;
17	1075	(L), 73 + (LO), 240 + (LO), 240 + (LO), 260 + (LO), 260;