Resonance Raman Scattering in TlGaSe₂ Crystals

Table 2

Emission lines of resonance Raman scattering in TlGaSe₂ crystals measured at 10 K and excited by 496.5 nm Ar⁺ laser line in geometry and possible phonons combinations (symmetry, modes, and frequencies) responsible for resonance scattering.

Line,	Wavenumber; shift, cm^−1	Assignment
1	66	(LO), 67;
2	75	(LO), 73;
3	85	(LO), 84;
4	96	(LO), 91;
5	117	(LO), 121; (TO), 116; (LO), 114;
6	142	(LO), 140; (LO), 67 + (LO), 73;
7	194	(LO), 114 + (LO), 84; (LO), 121 + (LO), 73;
8	217	(LO), 106 + (LO), 106;
9	236	(LO), 121 + (LO), 114; (LO), 162 + (LO), 73;
10	279	(LO), 114 + (LO), 162;
11	322	(LO), 240 + (LO), 84; (LO), 162 + (LO), 162;
12	355	(LO), 268 + (L), 84;
13	401	(LO), 240 + (LO), 260;
14	446	(LO), 224 + (LO), 224;
15	482	(LO), 260 + (LO), 224;
16	493	(LO), 268 + (LO), 224;
17	525	(LO), 260 + (LO), 268;