An Analytical Theory of Piezoresistive Effects in Hall Plates with Large Contacts

Figure 12

(a) Circular pseudo-Hall device with two perpendicular mirror-symmetry axes and . It can be used for the measurement of on a chip made of (100)-silicon. The device is supplied with electrical power at the contacts . The output signal is tapped between . The equivalent resistor circuit (ERC) is identical to Figure 6

(b) Output voltage of the circular device from (a) versus biaxial inplane mechanical stress with . The left plot shows the ratio of output over supply voltage. The right plot shows the ratio of transimpedance over sheet resistance at zero stress . The solid curves are computed with the analytical theory. The black dots denote results form 29 finite element simulations with , , and (as in low p-doped silicon)