An Analytical Theory of Piezoresistive Effects in Hall Plates with Large Contacts

Figure 18

Comparison of (a) supply voltage related mechanical stress sensitivity, and (b) supply current related stress sensitivity of pseudo-Hall stress sensors with different shapes. Piezoresistive coefficient for low p-doped silicon was assumed. Only offset-free devices with were considered. For the pseudo-Hall devices the number of squares is and for the Wheatstone bridge it is .

(a)

(b)