Research Article

First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction

Table 2

Unrelaxed and relaxed , , , and .

(eV) (eV) (eV) (J/m2)

Unrelaxed−5777.006−12844.091−18642.1630.104
Relaxed−5777.551−12845.745−18644.9260.106

(eV) (eV) (eV) (J/m2)

Unrelaxed−3207.981−8523.457−11742.8710.193
Relaxed−3208.026−8524.842−11746.0390.222