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Advances in Condensed Matter Physics
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Advances in Condensed Matter Physics
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2018
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Article
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Tab 3
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Research Article
First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction
Table 3
Relaxation energies of Ge(111)/4H-SiC(0001) and Ge(110)/4H-SiC(0001) interfaces.
Heterojunction
(eV)
(eV)
(eV/atom)
Ge(111)/4H-SiC(0001)
−18642.163
−18644.926
−0.017
Ge(110)/4H-SiC(0001)
−11742.871
−11746.039
−0.030