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Advances in Condensed Matter Physics
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Advances in Condensed Matter Physics
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2019
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Article
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Fig 11
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Research Article
Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible with Si Process
Figure 11
Distribution of
ε
xx
in the mesa region when the Ge component is 0.2, 0.3, 0.4, and 0.5.
(a)
(b)
(c)
(d)