Advances in Condensed Matter Physics

Low-Dimensional Semiconductor Structures for Optoelectronic Applications


Status
Published

Lead Editor

1Chinese Academy of Sciences, Shanghai, China

2Chinese Academy of Sciences, Beijing, China

3University of Western Australia, Crawley, Australia

4The Royal Institute of Technology (KTH), Stockholm, Sweden


Low-Dimensional Semiconductor Structures for Optoelectronic Applications

Description

A truly extraordinary research effort is pressed to develop a full understanding of the properties of matters at the nanoscale and its possible applications. The aim of this special issue is to bring together in one publication the outstanding papers reporting new and original theoretical, experimental, and/or simulation works in the following areas related to optoelectronic applications.

Potential topics include, but are not limited to:

  • Theory, modeling, and simulation of low-dimensional systems
  • Growth and fabrication techniques for low-dimensional structures and devices
  • Electronic, optical, and magnetic properties of low-dimensional systems
  • Semiconductor heterostructures, superlattices, quantum wells, quantum wires, and quantum dots
  • Quantum hall effects
  • Novel low-dimensional systems and devices, including graphene, carbon nanotubes, and nanowires
  • Nanostructure and its application
  • Metal-insulator transitions
  • Novel probes and experimental techniques

Articles

  • Special Issue
  • - Volume 2015
  • - Article ID 156196
  • - Editorial

Low-Dimensional Semiconductor Structures for Optoelectronic Applications

Wei Lu | Hong Chen | ... | Ying Fu
  • Special Issue
  • - Volume 2015
  • - Article ID 423791
  • - Research Article

Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications

C. H. Yu | X. Y. Chen | ... | P. S. Liu
  • Special Issue
  • - Volume 2015
  • - Article ID 482738
  • - Research Article

Experimental Determination of Effective Minority Carrier Lifetime in HgCdTe Photovoltaic Detectors Using Optical and Electrical Methods

Haoyang Cui | Jialin Wang | ... | Zhong Tang
  • Special Issue
  • - Volume 2015
  • - Article ID 918428
  • - Research Article

Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

Yanli Liu | Xifeng Yang | ... | Youdou Zheng
  • Special Issue
  • - Volume 2015
  • - Article ID 141056
  • - Research Article

Synthesis, Characterization, and Photoluminescence on the Glass Doped with AgInS2 Nanocrystals

Dewu Yin | Lang Pei | ... | Xiyan Zhang
  • Special Issue
  • - Volume 2015
  • - Article ID 920805
  • - Research Article

Photoelectric Characteristics of Double Barrier Quantum Dots-Quantum Well Photodetector

M. J. Wang | F. Y. Yue | F. M. Guo
  • Special Issue
  • - Volume 2015
  • - Article ID 326384
  • - Research Article

Modeling and Design of Graphene GaAs Junction Solar Cell

Yawei Kuang | Yushen Liu | ... | Jinfu Feng
  • Special Issue
  • - Volume 2015
  • - Article ID 847510
  • - Research Article

Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector

W. W. Wang | F. M. Guo | Y. Q. Li
  • Special Issue
  • - Volume 2015
  • - Article ID 583863
  • - Research Article

Shell Thickness-Dependent Strain Distributions of Confined Au/Ag and Ag/Au Core-Shell Nanoparticles

Feng Liu | Honghua Huang | ... | Shuangli Ye
  • Special Issue
  • - Volume 2015
  • - Article ID 306912
  • - Research Article

Photoresponse of Long-Wavelength AlGaAs/GaAs Quantum Cascade Detectors

Liang Li | Dayuan Xiong
Advances in Condensed Matter Physics
 Journal metrics
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Acceptance rate22%
Submission to final decision80 days
Acceptance to publication24 days
CiteScore2.500
Journal Citation Indicator0.210
Impact Factor1.5
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