Research Article
Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices
Table 2
Main results on wafer bench—implantation on the front EPI layer.
| Dose [cm−2] | SJ HV power MOSFETs results | [A] | [ns] | [nC] | BVdss [V] |
| 5 * 1012 | 5.1 | 120 | 354 | 500 | 1 * 1012 | 9.2 | 189 | 936 | 610 | 5 * 1011 | 11.5 | 237 | 1466 | 650 | 1 * 1011 | 21.1 | 400 | 4475 | 680 | No irradiation | 29.6 | 534 | 7582 | 680 | Std. electrons | 8.7 | 184 | 877 | 660 |
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