Research Article
Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices
Table 3
Main results on wafer bench—implantation on the front body-drain junction.
| Dose [cm−2] | SJ HV power MOSFETs results | [A] | [ns] | [nC] | BVdss [V] |
| 5 * 1012 | 6.7 | 180 | 602 | 460 | 1 * 1012 | 9.7 | 242 | 1176 | 570 | 5 * 1011 | 12.5 | 308 | 1926 | 630 | 1 * 1011 | 19.1 | 474 | 4524 | 670 | No irradiation | 29.6 | 534 | 7582 | 680 | Std. electrons | 8.7 | 184 | 877 | 660 |
|
|