Research Article
Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices
Table 5
Main results on wafer bench—implantation on the back EPI layer.
| Dose [cm−2] | SJ HV power MOSFETs results | [A] | [ns] | [nC] | BVdss [V] |
| 5 * 1012 | 9.5 | 232 | 1108 | 630 | 1 * 1012 | 11.9 | 282 | 1678 | 660 | 5 * 1011 | 13.5 | 335 | 2262 | 670 | 1 * 1011 | 19.1 | 477 | 4550 | 680 | No irradiation | 29.6 | 534 | 7582 | 680 | Std. electrons | 8.7 | 184 | 877 | 660 |
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