Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices

Table 5

Main results on wafer bench—implantation on the back EPI layer.

Dose [cm^−2]	SJ HV power MOSFETs results
	[A]	[ns]	[nC]	BVdss [V]
5 * 10^12	9.5	232	1108	630
1 * 10^12	11.9	282	1678	660
5 * 10^11	13.5	335	2262	670
1 * 10^11	19.1	477	4550	680
No irradiation	29.6	534	7582	680
Std. electrons	8.7	184	877	660