Research Article
Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices
Table 7
Main results on packaged power MOSFETs—implantation on the front body-drain border.
| Dose [cm−2] | SJ HV power MOSFETs results | [A] | [ns] | [nC] |
| 5 * 1012 | 10 | 116 | 630 | 1 * 1012 | 19 | 233 | 2370 | 5 * 1011 | 23 | 254 | 3133 | 1 * 1011 | 35 | 414 | 7626 | Std. electrons | 18 | 180 | 1800 |
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