From Random Telegraph to Gaussian Stochastic Noises: Decoherence and Spectral Diffusion in a Semiconductor Quantum Dot

Figure 5

(a), (b), (c): Interferogram contrast 𝐶(𝑡) of the photoluminescence signal of a single InGaAs QD at 10 K, on semilogarithmic plots, for three gate voltages: −0.24 V (a), −0.22 (b), and −0.2 V. Data (squares), theoretical fits corresponding to |𝜙₁(𝑡)𝜙_𝐺𝑁(𝑡)| (solid line). (d): Tunneling time versus gate voltage. Data (symbols), theoretical fit (solid line). The horizontal line indicates the capture time 𝜏_↓=500 ps.

(a)

(b)

(c)

(d)