The Charge Transport Properties of a HWCVD a-Si:H Thin Film under Bending Pressure

<table>Temperature derivative <math id="M23" xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mi>d</mi><msub><mrow><mi>V</mi></mrow><mrow><mn>20</mn><mi>c</mi></mrow></msub><mo>/</mo><mi>d</mi><mi>T</mi></mrow></math> versus energy <math id="M24" xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mrow><mo stretchy="false">(</mo><mi>ε</mi><mo>=</mo><mn>2</mn><mi>k</mi><mi>T</mi><mo stretchy="false">)</mo></mrow></mrow></math> and <i>T</i> (upper
scale) showing the difference density of trap states as they evolve into the
gap under various bending pressures.</table>

Advances in Materials Science and Engineering

fig2

Figure 2

Figure 2: The Charge Transport Properties of a HWCVD a-Si:H Thin Film under Bending Pressure 