Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms

<table>Calculated diffusion barrier <svg height="15.4" id="M17" style="vertical-align:-3.3907pt" version="1.1" viewbox="0 0 18.1 15.4" width="18.1" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M609 650l-19 -162l-30 -2q2 69 -14 94q-9 18 -28.5 26t-74.5 8h-88q-30 0 -37 -6.5t-12 -36.5l-41 -212h103q48 0 69 5.5t32 19t26 50.5h29l-40 -198h-30q2 58 -11.5 70.5t-85.5 12.5h-99l-30 -167q-17 -87 3 -101q18 -15 111 -15q59 0 89 7t54 27q8 7 15.5 16t16 21.5
l14 20.5t15 23.5t13.5 21.5l29 -10q-52 -129 -71 -163h-500l6 28q66 4 83 17.5t28 73.5l77 409q11 61 -0.5 75.5t-78.5 18.5l10 28h467z" id="x1D438"></path></g>
<g transform="matrix(.012,-0,0,-.012,10.8,15.187)"><path d="M530 686q-79 -330 -126 -595q-5 -24 4 -24q22 0 77 53l16 -24q-42 -49 -88 -78.5t-72 -29.5q-37 0 -19 83l21 99h-2q-62 -83 -153 -141q-65 -41 -97 -41q-28 0 -48 31.5t-20 91.5q0 71 32.5 144t88.5 118q36 30 94 52.5t94 22.5q38 0 68 -13l29 158q7 40 2 47.5t-38 7.5
h-35l1 26q39 4 76 13.5t58.5 17t27.5 7.5q16 0 9 -26zM387 375q-11 11 -38.5 20t-51.5 9q-45 0 -79 -23q-46 -32 -77.5 -107.5t-31.5 -143.5q0 -40 9.5 -58.5t23.5 -18.5q40 0 113.5 70t99.5 118z" id="x1D451"></path></g>
</svg> of 4th element impurity atoms in Si crystal.</table>

Advances in Materials Science and Engineering

fig1

Figure 1

Figure 1: Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms 