Growth of  AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition

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</svg> layers grown at 580°C and 600°C as a function of Al-content (mol-% AlSb).</table>

Advances in Materials Science and Engineering

fig4

Figure 4

Figure 4: Growth of  AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition 