Young's Modulus and Coefficient of Linear Thermal Expansion of ZnO Conductive and Transparent Ultra-Thin Films

Table 1

Specifications for the formation of GZO films by dc MS, rf + dc MS, and RPD.

	Magnetron sputtering		RPD
	dc MS	rf + dc MS
Ga2O3 content in ZnO source (wt%)	Ga2O3: 3.0–6.0		Ga2O3: 3.0–5.0
Power (kW)	0.1–2.0	rf: 0.1–1.5	Discharge
		dc: 0.1–1.5	current: 140–150
		rf/dc = 0.5–2.0	(A)
Operation pressure (Pa)	0.1–0.8	0.1–0.8	0.4–0.6
Deposition rate (nm/min)	4–20	4–20	150–170
Operation temperature (°C)	150–350	150–350	150–250