Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing

Figure 3

Kinetic analysis of the Ni₂Ge epitaxial growth within Ge nanowires. (a) Real-time record of the Ni₂Ge nanowire growth length versus the reaction time at 400 and 500°C, illustrating a potentially linear growth rate. (b)-(c) In situ TEM images of the Ni₂Ge growth within a Ge nanowire at 400°C annealing. The arrow indicates a corresponding length of 138.9 nm growth in 7 min 35 sec. (d)-(e) In situ TEM images of the Ni₂Ge growth within a Ge nanowire at 500°C annealing. The arrow indicates a corresponding length of 357.5 nm growth in 5 min 40 sec. Reproduced from [13].