Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing

Figure 4

A series of in situ TEM images at various annealing temperatures: (a) room temperature; (b) 400°C; (c) 450°C; (d) 500°C. The arrows indicate the interface between the formed Ni₂Ge and the Ge nanowire. The red circles indicate Ni₂Ge nanoparticles segregated from the Ni₂Ge nanowire. (e) TEM image of the Ni electrode reacted with a Ge nanowire upon 400°C annealing for 30 min. Reproduced from [13].