Review Article
Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing
Table 1
Summary of Si and Ge nanowire heterostructures formed by solid-state reactions between a semiconductor nanowire and metal contacts.
| Material system | Annealing condition (°C) | Formed silicide/germanide | Metal diffusion source |
| Ni-Si [6] | 550 | NiSi | Ni contact pad | Ni-Si [7] | 470 | NiSix (not identified) | Ni contact pad | Ni-Si [8] | 500–700 | NiSi | Ni nanowire |
Co-Si [9] | 700 | CoSi | Co nanodots | 800 | Co2Si | Co nanodots | Pt-Si [10] | 520 | PtSi | Pt contact pad | Mn-Si [11] | 650 | MnSi | Mn contact pad | Ni-Ge [13] | 400–500 | Ni2Ge | Ni contact pad | Ni-Ge [14] | 450 (capped with Al2O3) | Ni2Ge/NiGe | Ni contact pad | Ni-Ge [15] | 300–450 | Ni2Ge | Ni contact pad | Cu-Ge [16–18] | 310 | Cu3Ge | Cu contact pad |
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