High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument with <i>In Situ</i> AFM

<table>Depth profile of VECSEL 3/1 (see text). The well resolved aluminium features on the right hand side of the figure are each 100 nm in width and 100 nm apart. Similar results were achieved using a range of primary ion energies and currents. The modulation depth of the gallium signal is restricted because of the use of a gallium ion primary beam, which necessarily results in a strong gallium secondary ion background signal (due to secondary ions from implanted gallium).</table>

Advances in Materials Science and Engineering

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Figure 12

Figure 12: High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument with <i>In Situ</i> AFM 

Figure 12 | High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument with In Situ AFM 