High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument with <i>In Situ</i> AFM

<table>Side-on view of VECSEL 3/1 (see text). As for the depth profile, all features can be discerned, expect for the structure within each quantum well gain region (each 44 nm thick containing three 10 nm bands richer in aluminium). The 100 nm thick aluminium rich regions in the distributed Bragg reflector (right-hand side of figure and image) are well separated but do not have a flat-top. The lateral resolution is thus of the order of 100 nm in this example.</table>

Advances in Materials Science and Engineering

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Figure 13

Figure 13: High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument with <i>In Situ</i> AFM 

Figure 13 | High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument with In Situ AFM 