High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument with <i>In Situ</i> AFM

<table>FIB-SIMS depth profile of ALD multilayer (five repeats of nominally 20 nm zinc oxide/20 nm aluminium oxide on a silicon substrate). 240 pA, 5 keV normally incident Ga+ bombardment. For clarity, each trace is on a differently scaled linear vertical axis. The surface of the sample is to the left of the figure, the substrate to the right.</table>

Advances in Materials Science and Engineering

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Figure 15

Figure 15: High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument with <i>In Situ</i> AFM 

Figure 15 | High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument with In Situ AFM 