High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument with <i>In Situ</i> AFM

<table>Clarification of the primary ion beam and sample orientation for the BAM L200, VCSEL, and ALD samples described in the text, all of which have planar structures. Depth profiles are reconstructed using the middle quarter of each image slice (“frame”) in order to minimise edge effects. The resolution in the ion beam direction (depth resolution) is limited only by ion-induced mixing and roughening and redeposition/edge effects and is in general better than the resolution in the directions normal to the ion beam (lateral resolution) which depends heavily on the spot size and shape.</table>

Advances in Materials Science and Engineering

fig3

Figure 3

Figure 3: High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument with <i>In Situ</i> AFM 

Figure 3 | High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument with In Situ AFM 