High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument with In Situ AFM
Figure 7
Calibration plot for boron in doped silicon wafers showing a linear fit to the measured points (three standards and one blank), and 95% confidence limits. An oxygen partial pressure of 6.0 × 10−5 mbar was used to enhance the signal; the primary beam was 30 keV, >14.7 nA with a scan area of 10 by 10 μm (the current cannot be measured above 14.7 nA). The limit of detection under these conditions for this material was 5.5 ppm.
