Control of Crystallinity in Nanocrystalline Silicon Prepared by High Working Pressure Plasma-Enhanced Chemical Vapor Deposition
Figure 2
(a) XRD patterns obtained from HWP-PECVD Si films at different substrate scan speeds; the Raman spectra of Si films grown at substrate scan speeds (S.S.) (b) 8 mm/s, (c) 15 mm/s, (d) 25 mm/s, and (e) 30 mm/s. The crystalline volume fraction of the Si films increased from 30% to 57% with substrate scan speed.
