Control of Crystallinity in Nanocrystalline Silicon Prepared by High Working Pressure Plasma-Enhanced Chemical Vapor Deposition

Figure 3

(a) Dark-field image and (b) bright-field image of Si film deposited by HWP-PECVD at a substrate scan speed of 8 mm/s. HR-TEM images (c), (d), and (e) were taken from the top, middle, and bottom areas of the Si film. The crystalline size is determined to be around 5 nm, independent of depth direction.