Control of Crystallinity in Nanocrystalline Silicon Prepared by High Working Pressure Plasma-Enhanced Chemical Vapor Deposition

Figure 4

(a) Dark-field image and (b) bright-field image of Si film deposited by HWP-PECVD at a substrate scan speed of 30 mm/s. HR-TEM images (c), (d), and (e) were taken from the top, middle, and bottom areas of the Si film. The crystalline size is determined to be around 25 nm through the whole Si film.