Control of Crystallinity in Nanocrystalline Silicon Prepared by High Working Pressure Plasma-Enhanced Chemical Vapor Deposition

Figure 5

Dependence of the effective deposition thickness and crystalline size of HWP-PECVD Si films on substrate scan speed at a deposition temperature of 250°C. The effective deposition thickness during each scan decreased from 8 to 1.5 nm with an increase of substrate scan speed; the Si crystalline size increased from 5 to 30 nm.