Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

Figure 2

Schematic of the PIN single-ion detection system integrated into the high-purity Si substrate. The surface detector electrodes are connected to the p-wells on each side of the 5 nm thick gate oxide which has a width of 10 μm. Apertures in the PMMA mask allow ions to enter the substrate in selected areas. Two transients detected in the external circuit from single-ion impacts are shown in the bottom panel of the figure (as in [30]).