Review Article

Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

Figure 3

IBIC maps of a quantum computing device collected with a scanned 500 keV He microbeam. The top right-hand panel is a large area scan while the bottom right-hand panel is a close up showing the desired high charge collection efficiency in the site where the single-ion implantation will take place. The two left-hand panels are the corresponding SEM images of the device.
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