Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities
Figure 3
IBIC maps of a quantum computing device collected with a scanned 500 keV He microbeam. The top right-hand panel is a large area scan while the bottom right-hand panel is a close up showing the desired high charge collection efficiency in the site where the single-ion implantation will take place. The two left-hand panels are the corresponding SEM images of the device.