Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities
Figure 4
The effect of ion range straggling on the uncertainty in location of keV P and Sb ions implanted into Si: (a) variation in ion range and longitudinal straggling with ion energy for keV P and Sb ions. (b) Probability distributions for the implantation of 100 000 14 keV P+ ions through three circular apertures spaced 30 nm centre to centre. The aperture diameter is 10 nm in the top panel and 20 nm in the bottom panel.
