Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

<table>The fraction of an ions initial energy lost to electronic stopping processes by both the primary ion and recoils as predicted by SRIM (<i>f<sub>E</sub> </i><sub>,SRIM</sub>) divided by the value obtained from measurement using our single-ion detection system (<i>f<sub>E</sub></i>) and compared with previous data of Funsten et al. (as in [<a href="../#B44">39</a>, <a href="../#B47">40</a>]).</table>

Advances in Materials Science and Engineering

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Figure 5

Figure 5: Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities 