Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities
Figure 7
Changes in ID in nanoscale MOSFETs during (a) 500 keV He+ and (b) 14 keV P+ ion irradiation. Discrete steps represent single-ion impacts. Schematics of the devices are shown as insets. False color scanning electron microscopy, transmission electron microscopy, and atomic force microscopy images of a double gated MOSFET identical to those under study are shown in (c), (d), and (e), respectively (as in [41]).
