Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

<table>TCAD modelling of current density in the split-gate finFET device, showing the low current density in the exposed sections of the device where ion impacts will occur.</table>

Advances in Materials Science and Engineering

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Figure 8

Figure 8: Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities 