Research Article

Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment

Figure 4

(a) Turn-on voltage. (b) collector current as a function of annealing time for all fabricated npn graded-base AlGaN/GaN HBT’s. A N-HBT’s is also included for comparisons.
654762.fig.004a
(a)
654762.fig.004b
(b)