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Advances in Materials Science and Engineering
Volume 2012 (2012), Article ID 741561, 7 pages
http://dx.doi.org/10.1155/2012/741561
Research Article

Effects of Organic Compounds on Microstructure, Optical, and Electrical Properties of ITO Thin Films Prepared by Dip-Coating Method

1Department of Material Engineering, National Pingtung University of Science and Technology, Pingtung County 912, Taiwan
2Nanmat Technology CO., Ltd., Kaohsiung 811, Taiwan

Received 21 May 2012; Accepted 3 August 2012

Academic Editor: Yu-Pei Huang

Copyright © 2012 Ru-Yuan Yang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Tin-doped Indium oxide (ITO) thin films were prepared by sol-gel dip-coating technique using low-cost metal salts and organic solvents. The coated films were treated without annealing or annealed at 400°C and 600°C in 3% H2/97% N2 mixtures atmosphere. Microstructure, optical, and electrical properties of the prepared ITO films were investigated in detail. The maximum transmittance in the visible range (380–780 nm) is 85.6%, and the best resistivity is 5 × 1 0 2 Ω -cm when annealed at 600°C in 3% H2/97% N2 mixtures atmosphere. It is found that the optical and electrical properties of the prepared ITO films are strongly related to the microstructure variation. The organic compounds could not be removed completely, and the prepared ITO thin films were not dense when the prepared ITO film was annealed at 600°C in 3% H2/97% N2 mixtures atmosphere, causing the poor conductivity.