Table 1: Main characteristics of the prepared ITO thin films.

Annealing conditionsCarbon contenta (weight%)FWHMb (Degree)Crystal sizeb (nm)Conductivityc (S/cm)

Without annealing8.152.53.3 0 . 3 × 1 0 1
Annealed at 400°C4.902.33.9 0 . 8 × 1 0 1
Annealed at 600°C0.001.94.5 2 × 1 0 1

aBy EDS.
bBy XRD.
cBy 4-point probe.