Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering
Figure 4
Co on Si, higher coverage (≥2 ML). Panels at left-hand side: Co and Si (and Sb) HRBS spectra (circles) and RUMP simulations (solid lines). Panels at the right-hand side: Co and Si concentrations as derived by RUMP (depth scale: monolayers of Si, each at./cm2 thick). The right-hand side of the concentration profiles corresponds to the free surface of the samples. (a) Co deposition at RT. (b) Co and Si concentration profiles derived from (a). (c) Surfactant-mediated deposition of Co at RT. (d) Co and Si concentration profiles derived from (c). The right-hand side of the concentration profiles corresponds to the free surface of the samples. The right-hand side of the concentration profiles corresponds to the surface of the Co/Si samples (which in case of the Sb-mediated deposition is below an Sb layer). Layer 0 was deliberately put into the Si bulk.
