Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering
Figure 7
HRBS spectra of grown and thermal stability of ferromagnetic metal films (Co, Fe) on a MgO tunnel barrier/Si (100) structure. (a) Growth of Co (0.05–3 ML) using 2 Mev N+ ions for analysis at an incidence angle of 8°. RUMP simulation is also shown for 3 ML of Co. (b) Growth of Fe (0.05–4 ML) using 2 Mev He+ ions at an incidence angle of 3°. RUMP simulation is also shown for 4 ML of Fe. (c) HRBS spectra of 3 ML of Co as prepared (open circles) and after annealing at 450°C for 15 min (solid line). (d) HRBS spectra of 3 ML of Fe as prepared (open circles) and after annealing at 450°C for 15 min (solid line). No major changes are visible.
