Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices

<table>Typical current-voltage switching characteristics in Pt/ZnO/Pt memory cells. The set process can be performed by voltage sweep (<svg height="13.55" id="M32" style="vertical-align:-1.70624pt" version="1.1" viewbox="0 0 41.9375 13.55" width="41.9375" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.362)"><path d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52
t30 -51.5t49 -42.5t67 -16q56 0 88 32.5t32 87.5q0 51 -31.5 82t-98.5 67q-80 44 -110 73q-55 53 -55 124q0 75 56 126.5t150 51.5q53 0 126 -23z" id="x53"></path></g><g transform="matrix(.017,-0,0,-.017,8.341,11.362)"><path d="M380 106l15 -22q-42 -52 -87 -74t-76 -22q-89 0 -142 62t-53 151q0 103 66 175q67 73 146 73h1q61 0 105.5 -46.5t44.5 -105.5q0 -16 -4.5 -22.5t-18.5 -9.5q-54 -10 -262 -17q1 -95 46 -143.5t104 -48.5q61 0 115 50zM225 412q-35 0 -64.5 -32.5t-40.5 -90.5q83 0 170 3
q14 0 19 4.5t5 15.5q1 41 -23.5 70.5t-65.5 29.5z" id="x65"></path></g><g transform="matrix(.017,-0,0,-.017,15.565,11.362)"><path d="M298 36l-68 -35q-25 -13 -42 -13q-98 0 -98 119v290h-69l-4 11l28 29h45v72l65 67l14 -2v-137h113q8 -8 6 -21t-12 -19h-107v-256q0 -96 59 -96q29 0 61 17z" id="x74"></path></g><g transform="matrix(.017,-0,0,-.017,20.75,11.362)"><path d="M500 -125h-500v50h500v-50z" id="x5F"></path></g><g transform="matrix(.017,-0,0,-.017,29.249,11.362)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
</svg>) or current sweep (<svg height="13.55" id="M33" style="vertical-align:-1.70624pt" version="1.1" viewbox="0 0 36.762501 13.55" width="36.762501" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.362)"><path d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52
t30 -51.5t49 -42.5t67 -16q56 0 88 32.5t32 87.5q0 51 -31.5 82t-98.5 67q-80 44 -110 73q-55 53 -55 124q0 75 56 126.5t150 51.5q53 0 126 -23z" id="x53"></path></g><g transform="matrix(.017,-0,0,-.017,8.341,11.362)"><path d="M380 106l15 -22q-42 -52 -87 -74t-76 -22q-89 0 -142 62t-53 151q0 103 66 175q67 73 146 73h1q61 0 105.5 -46.5t44.5 -105.5q0 -16 -4.5 -22.5t-18.5 -9.5q-54 -10 -262 -17q1 -95 46 -143.5t104 -48.5q61 0 115 50zM225 412q-35 0 -64.5 -32.5t-40.5 -90.5q83 0 170 3
q14 0 19 4.5t5 15.5q1 41 -23.5 70.5t-65.5 29.5z" id="x65"></path></g><g transform="matrix(.017,-0,0,-.017,15.565,11.362)"><path d="M298 36l-68 -35q-25 -13 -42 -13q-98 0 -98 119v290h-69l-4 11l28 29h45v72l65 67l14 -2v-137h113q8 -8 6 -21t-12 -19h-107v-256q0 -96 59 -96q29 0 61 17z" id="x74"></path></g><g transform="matrix(.017,-0,0,-.017,20.75,11.362)"><path d="M500 -125h-500v50h500v-50z" id="x5F"></path></g><g transform="matrix(.017,-0,0,-.017,29.249,11.362)"><path d="M414 650l-6 -28q-63 -4 -78.5 -17.5t-27.5 -71.5l-77 -416q-11 -58 0.5 -71.5t77.5 -17.5l-5 -28h-275l8 28q63 4 79.5 18.5t27.5 70.5l80 416q11 57 -2 71t-81 18l6 28h273z" id="x1D43C"></path></g>
</svg>).</table>

Advances in Materials Science and Engineering

fig2

Figure 2

Figure 2: Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices 