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Advances in Materials Science and Engineering
Volume 2013 (2013), Article ID 531573, 4 pages
http://dx.doi.org/10.1155/2013/531573
Research Article

A Current Transport Mechanism on the Surface of Pd-SiO2 Mixture for Metal-Semiconductor-Metal GaAs Diodes

Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung 202, Taiwan

Received 30 October 2012; Accepted 15 May 2013

Academic Editor: Markku Leskela

Copyright © 2013 Shih-Wei Tan and Shih-Wen Lai. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

This paper presents a current transport mechanism of Pd metal-semiconductor-metal (MSM) GaAs diodes with a Schottky contact material formed by intentionally mixing SiO2 into a Pd metal. The Schottky emission process, where the thermionic emission both over the metal-semiconductor barrier and over the insulator-semiconductor barrier is considered on the carrier transport of a mixed contact of Pd and SiO2 (MMO) MSM diodes, is analyzed. The image-force lowering is accounted for. In addition, with the applied voltage increased, the carrier recombination is thus considered. The simulation data are presented to explain the experimental results clearly.