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Advances in Materials Science and Engineering
Volume 2013 (2013), Article ID 531573, 4 pages
http://dx.doi.org/10.1155/2013/531573
Research Article

A Current Transport Mechanism on the Surface of Pd-SiO2 Mixture for Metal-Semiconductor-Metal GaAs Diodes

Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung 202, Taiwan

Received 30 October 2012; Accepted 15 May 2013

Academic Editor: Markku Leskela

Copyright © 2013 Shih-Wei Tan and Shih-Wen Lai. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Shih-Wei Tan and Shih-Wen Lai, “A Current Transport Mechanism on the Surface of Pd-SiO2 Mixture for Metal-Semiconductor-Metal GaAs Diodes,” Advances in Materials Science and Engineering, vol. 2013, Article ID 531573, 4 pages, 2013. doi:10.1155/2013/531573