Charge-Trapping Devices Using Multilayered Dielectrics for Nonvolatile Memory Applications

Table 1

Comprised memory parameters of the charge trapping devices.

Trapping layer	Ta2O5 (this work)	Ta2O5 [11]	Ta2O5 [12]	Y2O3 [14]	Y2O3 [15]	HfO2 [16]	HfO2 [17]	ZrO2 [18]	La2O3 [19]	Dy2O3 [20]
Program speed	10 ns	1 𝜇s	10 ns	0.1 ms	0.1 ms	1 𝜇s	10 𝜇s	0.1 ms	0.1 ms	~0.1 s
	𝑉𝑔=6 V	𝑉𝑔=10 V	𝑉𝑔=10 V	𝑉𝑔=8 V	𝑉𝑔=6 V		𝑉𝑔=15 V	𝑉𝑔=15 V	𝑉𝑔=9 V	𝑉𝑔=7 V
	Δ𝑉𝑡=1 V	Δ𝑉𝑡=0.5 V	Δ𝑉𝑡=0.5 V	𝑉𝑑=6 V	𝑉𝑑=8 V		𝑉𝑑=10 V	𝑉𝑑=10 V	𝑉𝑑=9 V	Δ𝑉𝑡=0.5 V
				Δ𝑉𝑡=1 V	Δ𝑉𝑡=1.4 V		Δ𝑉𝑡=1 V	Δ𝑉𝑡=2 V	Δ𝑉𝑡=2.1 V
Erase speed	100 ns	10 ns	1 μs	10 μs	10 μs	0.1 ms	10 μs	10 ms	0.1 ms	~0.1 s
	𝑉𝑔=−8 V	𝑉𝑔=−10 V	𝑉𝑔=−10 V	𝑉𝑔=−3 V	𝑉𝑔=−3 V		𝑉𝑔=−12 V	𝑉𝑔=−10 V	𝑉𝑔=−5 V	𝑉𝑔=−10 V
	Δ𝑉𝑡=1 V	Δ𝑉𝑡=0.5 V	Δ𝑉𝑡=0.5 V	𝑉𝑑=8 V	𝑉𝑑=8 V		𝑉𝑑=10 V	𝑉𝑑=10 V	𝑉𝑑=9 V	Δ𝑉𝑡=0.5 V
				Δ𝑉𝑡=1.5 V	Δ𝑉𝑡=2.1 V		Δ𝑉𝑡=1.5 V	Δ𝑉𝑡=2 V	Δ𝑉𝑡=2 V
Memory window	1.6 V	0.8 V	2.5 V	2.3 V	2.4 V	1.2–1.5 V	1.5 V	2.7 V	2 V	~1.5 V
Retention	0.81 V	0.64 V	0.64 V	8%CL	4%CL	10%CL	6%CL	5%CL	9%CL	0.9 V
	(3 × 10^8 s)	(3 × 10^8 s)	(3 × 10^8 s)	(10^4 s)	(10^4 s)	(10^5 s)	(10^4 s)	(10^4 s)	(10^8 s)	(3 × 10^8 s)

CL: charge loss.