Comparison of H<sub><b>2</b></sub> and NH<sub><b>3</b></sub> Treatments for Copper Interconnects

<table>AES depth profile of Si, N, O, and Cu atomic concentrations in the Cu/SiN multilayer structures (a) without plasma treatment and (b) with 30 s NH<sub>3</sub> plasma treatment.</table>

Advances in Materials Science and Engineering

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Figure 1

Figure 1: Comparison of H<sub><b>2</b></sub> and NH<sub><b>3</b></sub> Treatments for Copper Interconnects 

Advances in Materials Science and Engineering

Comparison of H2 and NH3 Treatments for Copper Interconnects

Figure 1

Comparison of H₂ and NH₃ Treatments for Copper Interconnects