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Advances in Materials Science and Engineering
Volume 2013 (2013), Article ID 857196, 8 pages
http://dx.doi.org/10.1155/2013/857196
Review Article

Application of Electron Beam Melting to the Removal of Phosphorus from Silicon: Toward Production of Solar-Grade Silicon by Metallurgical Processes

1International Research Center for Sustainable Materials, Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
2Department of Materials Engineering, Graduate School of Engineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
3Department of Mechanical Science and Engineering, Chiba Institute of Technology, 2-17-1 Tsudanuma, Narashino, Chiba 275-0016, Japan

Received 28 June 2013; Accepted 16 September 2013

Academic Editor: Raghubir Singh Anand

Copyright © 2013 Hideaki Sasaki et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Removal methods of impurity from metallurgical-grade silicon (Si) are intensively studied to produce solar-grade silicon (SoG-Si) with a smaller economical load and lower cost. Removal of phosphorus (P) has been an important issue because of difficulties in application of conventional metallurgical methods such as solidification refining. Because P evaporates preferentially from molten Si due to its high vapor pressure, electron beam (EB) melting has been applied to the purification of Si. The evaporation of impurity P from Si is considered based on previous thermodynamic investigations here, and several research reports on EB melting of Si are reviewed.