Application of Electron Beam Melting to the Removal of Phosphorus from Silicon: Toward Production of Solar-Grade Silicon by Metallurgical Processes

Table 1

Acceptable contents of impurity in SoG-Si (𝐶_SoG-Si) and their equilibrium segregation coefficients (k).

Element	Fe	Al	Cu	Ti	Ca	C	O	P	B
Acceptable content, 𝐶SoG-Si (ppmw) [3]	<1	0.005–0.05	—	<1	<2	0.5–1	10–20	0.02–2	0.1–10
Acceptable content, 𝐶SoG-Si (ppmw) [4]	<0.007	<0.06	—	<4×10^−5	—	<3	<4	<0.1	0.1–0.3
Segregation coefficient, k	8×10^−6	2×10^−3	4×10^−4	3.6×10^−6	—	0.034–0.3 [3]	0.2–1.25 [3]	0.35	0.72–0.8