Review Article
Application of Electron Beam Melting to the Removal of Phosphorus from Silicon: Toward Production of Solar-Grade Silicon by Metallurgical Processes
Table 3
Previous research on removal of P by induction furnace.
| | Weight of Si sample/kg | Temperature/K | Chamber pressure/Pa | P content in ppm (time) | Apparent mass transfer coefficient, /m s−1 |
| Suzuki et al. (1990) [33] |
0.02 |
1723~1823 | |
32→6~7 (2700 s) | (1723 K) | (1823 K) |
| Yuge et al. (1997) [34] | 0.02, 0.04, 1 | 1722~1915 | 0.8~ | 7→<0.1 (7200 s) | −2.29 − 15600/T |
| Zheng et al. (2010) [35] (2011) [36, 37] | 5 | 1823 | 0.03 | 15→11 (7200 s) |
(Dependence on pressure was studied) at 0.01~1 Pa, Below 10−9 at over 10000 Pa (1783 K) | | 1873 | 0.03~0.07 | 15→7.3 (7200 s) | | 1923 | 0.03~0.13 | 15→2.6 (7200 s) | | 1923 | 0.02~0.09 | 15→1.7 (7200 s) | | 1973 | 0.04~0.25 | 15→0.41 (7200 s) | | 1973 | 0.01~0.05 | 15→0.15 (7200 s) | — | 1873 | 0.6–0.8 | 460→10 (3600 s) |
| Safarian and Tangstad (2012) [38, 39] |
0.3 | 1773 |
0.5 | 17→9.8 (900 s) | (1773 K) | 1873 | 17→5.9 (900 s), 1.5 (1800 s) | (1873 K) | 1873 | 24→19 (3600 s) | (1873 K) | 1973 | 24→0.4~3 (9000 s) | (1973 K) |
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